SE1020W データシートの表示（PDF） - SiGe Semiconductor, Inc.
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SE1020W Datasheet PDF : 7 Pages
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Bondpad Diagram
SE1020W
1.25 Gb/s Transimpedance Amplifier
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VCC 1
10 VCC
TZ_IN 2
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3
4
5
6
VEE2 VEE1 VEE1 VEE1
9 OUTP
8 OUTN
7
VCC
Bondpad Description
Pad No.
1
2
3
4
5
6
7
8
9
10
Name
VCC
TZ_IN
VEE2
VEE1
VEE1
VEE1
VCC
OUTN
OUTP
VCC
Description
Positive supply (+3.3 V), pads 1, 7 & 10 are connected on chip. Only one
pad needs to be bonded.
Input pad (connect to photodetector anode).
Negative supply (0V) – Note this is separate ground for the input stage,
which is AC coupled on chip. There is no DC current through this pad.
Negative supply (0V), pads 4, 5 & 6 are connected on chip. Only one pad
needs to be bonded.
Negative supply (0V), pads 4, 5 & 6 are connected on chip. Only one pad
needs to be bonded.
Negative supply (0V), pads 4, 5 & 6 are connected on chip. Only one pad
needs to be bonded.
Positive supply (+3.3 V), pads 1, 7 & 10 are connected on chip. Only one
pad needs to be bonded.
Negative differential voltage output.
Positive differential voltage output.
Positive supply (+3.3 V), pads 1, 7 & 10 are connected on chip. Only one
pad needs to be bonded.
42-DST-01 Rev 1.3 May 27/02
Confidential
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