SE1020W データシートの表示（PDF） - SiGe Semiconductor, Inc.
部品番号
コンポーネント説明
メーカー
SE1020W Datasheet PDF : 7 Pages
| |||
SE1020W
1.25 Gb/s Transimpedance Amplifier
Product Preview
Electrical Specifications
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent
damage to, or affect the reliability of the device. Avoid operating the device outside the recommended
operating conditions defined below.
Symbol Parameter
Min
Max
Unit
VCC
Supply Voltage
–0.7
6.0
V
VIO
Voltage at any input or output
–0.5
VCC+0.5
V
IIO
Current sourced into any input or output except TZ_IN
–20
+20
mA
IIO
Current sourced into pin TZ_IN
–5
+5
mA
VESD
Electrostatic Discharge (100 pF, 1.5 kΩ) except TZ_IN
–2
2
kV
VESD
Electrostatic Discharge (100 pF, 1.5 kΩ) pin TZ_IN
–0.25
0.25
kV
Tstg
Storage Temperature
–65
150
°C
Recommended Operating Conditions
Symbol
VCC
Tj
Parameter
Supply Voltage
Operating Junction Temperature
Min
Typ
Max
Unit
3.1
3.3
3.5
V
–40
125
°C
DC Electrical Characteristics
Symbol
ICC max
ICC zero
lagc
Vin
Vout
Rout
Parameter
Supply Current (max input current)
Supply Current (zero input current)
AGC Threshold
Input Bias Voltage
Output Bias Voltage
Output Resistance
Min
24
VCC–1.57
35
Typ
41
33
VCC–1.52
VCC–0.15
50
Max
65
52
VCC–1.47
65
Unit
mA
mA
µA pk-pk
V
V
Ω
42-DST-01 Rev 1.3 May 27/02
Confidential
4 of 7
Share Link: 