SE1020W データシートの表示（PDF） - SiGe Semiconductor, Inc.

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SE1020W

1.25 Gb/s Transimpedance Amplifier Product Preview

SiGe Semiconductor, Inc. 

SE1020W

1.25 Gb/s Transimpedance Amplifier

Product Preview

AC Electrical Characteristics

Symbol Parameter

Min

Typ

Max

BW (3dB) Small Signal Bandwidth at –3dB point

0.95

1.2

Tz

Differential Transimpedance (50 Ω on

each output, f = 100 MHz)

2.9

4.0

5.4

Dri

Input Data Rate

50

1250

Voutmax Maximum Differential Output Voltage

300

Flf

Low Frequency Cut-off

10

20

lOL

Input Current before overload

(1.25 Gb/s NRZ data)

2600

Pol

Optical Overload

+3.3

Nrms

Input Noise Current (in 1 GHz)

180

255

DC and AC electrical characteristics are specified under the following conditions:

Supply Voltage (VCC) ................................... 3.1 V to 3.5 V

Junction Temperature (Tj) ............................. –40°C to 125°C

Load Resistor (RL) ......................................... 50 Ω AC coupled via 220 nF, for each output

Photodetector Capacitance (Cd) ................... 0.7 pF

Input bond wire inductance............................ 1 nH

Photodetector responsivity ............................ 0.6 A/W

Transimpedance (Tz) measured with 4 µA mean photocurrent

Unit

GHz

kΩ

Mb/s

mV pk-pk

kHz

µA pk-pk

dBm

nA rms

42-DST-01 Rev 1.3 May 27/02

Confidential

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