SE1020W データシートの表示（PDF） - SiGe Semiconductor, Inc.
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SE1020W Datasheet PDF : 7 Pages
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SE1020W
1.25 Gb/s Transimpedance Amplifier
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Bondpad Configuration
The diagram below shows the bondpad configuration of the SE1020W Transimpedance Amplifier: Note that
the diagram is not to scale. Bondpad openings are 82 µm x 82 µm. There are three VCC and three VEE1
pads for ease of wire bonding – the VCC and VEE1 pads respectively are connected on-chip and only one
pad of each type is required to be bonded out.
1.25 mm
VCC 1
10 VCC
TZ_IN 2
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9 OUTP
0.925
mm
8 OUTN
3
4
5
6
7
VEE2 VEE1 VEE1 VEE1
VCC
Applications Information
For optimum performance it is recommended that the device be configured as in the circuit shown in the
diagram below.
Note that all VCC pads (1, 7, 10) are connected on-chip, as are the VEE1 pads (4, 5, 6),.and only one pad of
each type is required to be bonded out. However, in order to minimize inductance for optimum high speed
performance, it is recommended that all power pads are wire bonded. The VEE2 pad is not connected on
chip to VEE1 and must be bonded out separately.
+3.3 V
1 nF min
PIN or APD
PIN or APD Bias
2 TZ_IN
1 7 10
VCC
TZ Amplifier
SE1020W
9
OUTP
OUTN 8
VEE2
3
VEE1
456
1 nF min
To 50 Ω loads,
AC coupled
0V
42-DST-01 Rev 1.3 May 27/02
Confidential
6 of 7
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