SE1050W データシートの表示（PDF） - SiGe Semiconductor, Inc.

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SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

SiGe Semiconductor, Inc. 

SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

Final

AC Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

BW (3dB) Small Signal Bandwidth at –3dB point

8

9.8

13

Tz

Differential Transimpedance (50 Ω on each output,

0.75

1.2

1.8

f = 100 MHz)

Dri

Input Data Rate

10.7

Voutmax

Flf

Maximum Differential Output Voltage

Low Frequency Cut-off

1.1

37

47

PSRR

Power Supply Rejection Ratio (differential) up to

100 kHz

16

24

PSRR

Power Supply Rejection Ratio (single-ended) up to

100 kHz

30

38

Olim

Onset of Limiting (mean input current from

photodetector)

290

460

DR

Linear Dynamic Range (sensitivity to onset of

limiting)

17

lOL

Input Current before overload (10 Gb/s NRZ data)

2300

Pol

Optical Overload

+1.1

Nrms

Input Noise Current (in 10 GHz)

1.4

2.0

DC and AC electrical characteristics are specified under the following conditions:

Supply Voltage (VCC).........................................4.7 V to 5.3 V

Junction Temperature (Tj)..................................–40°C to 100°C

Load Resistor (RL)...............................................50 Ω AC coupled via 100 nF, for each output

Photodetector Capacitance (Cd)......................0.2 pF

Input bond wire inductance (Li) ........................1.1 nH

(Must comply with recommended bonding arrangement that will be provided as an application note)

Photodetector responsivity ................................0.9 A/W

Photodetector series resistance........................10 Ω max

Transimpedance (Tz) measured with 0 > lin < 580 µA pk-pk, at 100 MHz

Unit

GHz

kΩ

Gb/s

V pk-pk

kHz

dB

dB

µA mean

dB

µA pk-pk

dBm

µA rms

45-DST-01 § Rev 1.5 § May 24/02

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