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SE1050W データシートの表示(PDF) - SiGe Semiconductor, Inc.

部品番号
コンポーネント説明
メーカー
SE1050W
SIGE
SiGe Semiconductor, Inc. SIGE
SE1050W Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
SE1050W
LightCharger10 Gb/s Transimpedance Amplifier
Final
The diagram below shows the bondpad configuration of the SE1050W Transimpedance Amplifier. Note that the
diagram is not to scale. All bondpads are 92 µm x 92 µm with a passivation opening of 82 µm x 82 µm. All VCC and
GND pads must be bonded to minimize inductive effects.
Mechanical die visual inspection criteria per MIL-STD-883 Method 2010.10 Condition B Class Level B.
121.7 113.2
385.0
188.1
Top
View
116.5 117.0 131.7 115.0
212.8
115.0
1053.0
Side View
All Dimensions in Microns (µm)
45-DST-01 § Rev 1.5 § May 24/02
7 of 11

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