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Q65110A2709 データシートの表示(PDF) - OSRAM GmbH

部品番号
コンポーネント説明
メーカー
Q65110A2709
OSRAM
OSRAM GmbH OSRAM
Q65110A2709 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Sender (GaAs-Diode)
Emitter (GaAs diode)
Durchlaβspannung
Forward voltage
IF = 50 mA
Sperrstrom
Reverse current
VR = 5 V
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
Wärmewiderstand1)
Thermal resistance1)
Empfänger (Si-Fototransistor)
Detector (silicon phototransistor)
Kapazität
Capacitance
VCE = 5 V, f = 1 MHz
Kollektor-Emitter-Reststrom
Collector-emitter leakage current
VCE = 20 V
Fotostrom (Fremdlichtempfindlichkeit)
Photocurrent (outside light density)
VCE = 5 V, Ev = 1000 Lx
Wärmewiderstand1)
Thermal resistance1)
SFH 9202
Symbol
Symbol
Wert
Value
Einheit
Unit
VF
IR
CO
RthJA
1.25 (1.65) V
0.01 (1)
μA
25
pF
270
K/W
CCE
ICEO
IP
RthJA
5
pF
1 (≤ 50)
nA
1
mA
270
K/W
2007-04-03
3

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