SGA-9189 データシートの表示（PDF） - Sirenza Microdevices => RFMD
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SGA-9189 Datasheet PDF : 4 Pages
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SGA-9189 Medium Power Discrete SiGe Transistor
De-embedded
S-Parameters
(Z =Z =50
SL
Ohms,
V =5V,
CE
I =185mA,
CQ
25° C)
Insertion Gain & Isolation
45
5
35
-5
25
Isolation -15
15
-25
5
Gain
Gmax
-35
-5
-45
012345678
Frequency (GHz)
S11 vs Frequency
1.0
0.5
4 GHz
2.0
3 GHz
5 GHz
0.2
2 GHz
5.0
1 GHz
0.0
0.2
8 GHz
0.5
1.0
2.0
5.0
inf
Insertion Gain vs Temperature
30
25
20
15
10
T = -40, 25, 85°C
5
0
-5
-10
012345678
Frequency (GHz)
S22 vs Frequency
1.0
0.2
0.0
0.5
5 GHz
4 GHz
3 GHz
2 GHz
1 GHz
0.2
0.5
1.0
2.0
5.0
8 GHz
2.0
5.0
inf
S11
0.2
50 MHz
0.5
5.0
2.0
0.2
S22
50 MHz
0.5
5.0
2.0
1.0
1.0
Note: S-parameters are de-embedded to the device leads with ZS=ZL=50Ω. The data represents typical performace of the device.
De-embedded s-parameters can be downloaded from our website (www.sirenza.com).
400
350
300
250
200
150
100
50
0
0
DC-IV Curves
2
4
6
VCE (V)
Ib = 0.4 - 3.6 mA , 0.4 mA steps
T=25C
8
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-101497 Rev H
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