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SGL-0163 データシートの表示(PDF) - Sirenza Microdevices => RFMD

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SGL-0163 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
SGL-0163(Z) 100-1300 MHz SiGe Low Noise Amplifier
Typical RF Performance at VS = 3 V and 4 V -- 800-1300 MHz Evaluation Board -- TLEAD=+25°C
Input IP3 vs Frequency
22.0
20.0
18.0
16.0
14.0
12.0
10.0
8.0
+3V
6.0
+4V
4.0
2.0
800 850 900 950 1000 1050 1100 1150 1200 1250 1300
Freq. (MHz)
SGL-0163 Noise Figure
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
+3V
1.1
+4V
1.0
800 850 900 950 1000 1050 1100 1150 1200 1250 1300
Freq. (MHz)
P1dB vs Frequency
20.0
18.0
16.0
+3V
14.0
+4V
12.0
10.0
8.0
6.0
4.0
2.0
0.0
800 850 900 950 1000 1050 1100 1150 1200 1250 1300
Freq. (MHz)
Output IP3 vs Frequency
34.0
32.0
30.0
28.0
26.0
24.0
22.0
20.0
+3V
18.0
+4V
16.0
14.0
800 850 900 950 1000 1050 1100 1150 1200 1250 1300
Freq. (MHz)
Device Voltage (VD) vs. Device Current (ID) Over Temperature
Load lines for VS = +5 Volts, RB2 = 43 W and 180 W
5.0
VS= +5 V, RB2 = 43 W
4.5
4.0
3.5
3.0
2.5
2.0
VS = +5 V, RB2 = 180 W
1.5
-40°C
+25°C
+85°C
1.0
0.5
0.0
6
11
16
21
26
ID (mA)
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
Max. Device Voltage (VS)
Max. RF Input Power
45 mA
5V
+10 dBm
Max. Junction Temp. (TJ)
Operating Temp. Range (TLEAD)
Max. Storage Temp.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
IDVD < (TJ - TLEAD) / RTH, j-l
303 South Technology Court
Broomfield, CO 80021
EDS-101501 Rev C
2
Phone: (800) SMI-MMIC
http://www.sirenza.com

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