SI4532ADY-T1-GE3 データシートの表示（PDF） - Vishay Semiconductors
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SI4532ADY-T1-GE3 Datasheet PDF : 10 Pages
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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
20
VGS = 10 V thru 5 V
16
4V
16
12
12
Si4532ADY
Vishay Siliconix
8
4
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.15
0.12
0.09
0.06
0.03
VGS = 4.5 V
VGS = 10 V
0.00
0
4
8
12
16
20
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
VDS = 10 V
ID = 4.9 A
8
6
4
2
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
Gate Charge
8
TC = 125 °C
4
25 °C
- 55 °C
0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
600
500
Ciss
400
300
200
Coss
100
Crss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
VGS = 10 V
1.6
ID = 4.9 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 71133
www.vishay.com
S11-1908-Rev. D, 26-Sep-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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