SI4532ADY-T1-GE3 データシートの表示（PDF） - Vishay Semiconductors
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SI4532ADY-T1-GE3 Datasheet PDF : 10 Pages
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Si4532ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
0.15
10
TJ = 150 °C
TJ = 25 °C
0.12
0.09
ID = 4.9 A
0.06
0.03
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
0.0
ID = 250 µA
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
24
18
12
6
0
10 - 3
10 - 2
10 - 1
1
10
Time (s)
100 600
Single Pulse Power
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 - 3
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (s)
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
Document Number: 71133
4
S11-1908-Rev. D, 26-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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