SI4532ADY-T1-GE3 データシートの表示（PDF） - Vishay Semiconductors
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SI4532ADY-T1-GE3 Datasheet PDF : 10 Pages
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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
Si4532ADY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
VGS = 10 V thru 6 V
16
5V
12
20
TC = - 55 °C
16
25 °C
125 °C
12
8
4V
4
2V
3V
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.30
8
4
0
0
1
2
3
4
5
6
7
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
0.24
0.18
0.12
0.06
VGS = 4.5 V
VGS = 10 V
0.00
0
3
6
9
12
15
ID - Drain Current (A)
On-Resistance vs. Drain Current
800
Ciss
600
400
200
Coss
Crss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 71133
www.vishay.com
S11-1908-Rev. D, 26-Sep-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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