SI4532ADY-T1-GE3 データシートの表示（PDF） - Vishay Semiconductors
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SI4532ADY-T1-GE3 Datasheet PDF : 10 Pages
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Si4532ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
VDS = 10 V
ID = 3.9 A
8
6
4
2
1.8
VGS = 10 V
1.6
ID = 3.9 A
1.4
1.2
1.0
0.8
0
0
2
4
6
8
10
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
30
0.40
TJ = 150 °C
10
0.32
ID = 3.9 A
0.24
0.16
TJ = 25 °C
0.08
1
0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.6
ID = 250 µA
0.4
0.2
0.0
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
24
18
12
6
0
10 - 2
10 - 1
1
10
100
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
Document Number: 71133
6
S11-1908-Rev. D, 26-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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