SI6467BDQ(2002) データシートの表示（PDF） - Vishay Semiconductors
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SI6467BDQ Datasheet PDF : 5 Pages
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Si6467BDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power, Junction-to-Ambient
50
0.3
40
0.2
ID = 250 mA
30
0.1
20
0.0
10
-0.1
-0.2
-50 -25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0
10- 2
10- 1
1
10
100
Time (sec)
100
Limited
by rDS(on)
10
Safe Operating Area, Junction-to-Case
10 ms
1
100 ms
1s
0.1
10 s
TC = 25_C
dc
Single Pulse
2
1
Duty Cycle = 0.5
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Single Pulse
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 100_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72087
S-22382—Rev. A, 30-Dec-02
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