SI6467BDQ(2002) データシートの表示（PDF） - Vishay Semiconductors
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SI6467BDQ Datasheet PDF : 5 Pages
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New Product
P-Channel 1.8-V (G-S) MOSFET
Si6467BDQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0125 @ VGS = -4.5 V
-12
0.0155 @ VGS = -2.5 V
0.020 @ VGS = -1.8 V
ID (A)
-8.0
- 7.0
- 6.0
S*
TSSOP-8
D 1D
S2
Si6467BDQ
S3
G4
Top View
8D
7S
6S
5D
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 8.0
-6.5
-1.35
1.5
1.0
-12
"8
-30
-55 to 150
-6.8
-5.4
-0.95
1.05
0.67
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 72087
S-22382—Rev. A, 30-Dec-02
Symbol
RthJA
RthJF
Typical
65
100
43
Maximum
83
120
52
Unit
_C/W
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