SI9934BDY(2006) データシートの表示（PDF） - Vishay Semiconductors

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SI9934BDY
(Rev.:2006)

Dual P-Channel 2.5-V (G-S) MOSFET

Vishay Semiconductors 

SPICE Device Model Si9934BDY

Vishay Siliconix

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Static

Gate Threshold Voltage

On-State Drain Currenta

VGS(th)

ID(on)

Drain-Source On-State Resistancea

rDS(on)

Forward Transconductancea

gfs

Diode Forward Voltagea

VSD

Dynamicb

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time

tr

Turn-Off Delay Time

td(off)

Fall Time

tf

Notes

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

VDS = VGS, ID = −250 µA

VDS = −5 V, VGS = −4.5 V

VGS = −4.5 V, ID = −6.4 A

VGS = −2.5 V, ID = −1.8 A

VDS = −10 V, ID = −6.4 A

IS = −1.7 A, VGS = 0 V

VDS = −6 V, VGS = −4.5 V, ID = −6.4 A

VDD = −6 V, RL = 6 Ω

ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω

Simulated Measured

Data

Data

1.2

85

0.027

0.043

17

−0.80

0.028

0.044

17

−0.80

11.4

13

2.6

2.6

4

4

46

35

28

35

70

80

21

50

Unit

V

A

Ω

S

V

nC

ns

www.vishay.com

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Document Number: 73465

S-60409Rev. B, 20-Mar-06

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