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SM5817 データシートの表示(PDF) - HY ELECTRONIC CORP.

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SM5817 Datasheet PDF : 2 Pages
1 2
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal-Semiconductor junction with gard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low vlotage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
CaseMolded Plastic
Polarity: lndicated by cathode band
Weight: 0.002 ounces,0.064 grams
SM5817 thru SM5819
REVERSE VOLTAGE - 20 to 40 Volts
FORWARD CURRENT - 1.0 Amperes
SMA
.062(1.60)
.055(1.40)
.181(4.60)
.157(4.00)
.103(2.62)
.079(2.00)
.060(1.52)
.030(0.76)
.208(5.28)
.188(4.80)
.114(2.90)
.098(2.50)
.012(.305)
.006(.152)
.008(.203)
.002(.051)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TA =75
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Maximum Forward Voltage at 1.0A DC
SYMBOL
VRRM
VRMS
VDC
I(AV)
IFSM
VF
Maximum Forward Voltage at 3.0A DC
VF
Maximum DC Reverse Current
@TJ=25
IR
at Rated DC Bolcking Voltage
@TJ=100
Typical Junction Capacitance (Note1)
CJ
Typical Thermal Resistance (Note2)
RθJA
Operating Temperature Range
Storage Temperature Range
TJ
TSTG
NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance junction to ambient,
SM5817
20
14
20
0.450
0.750
SM5818
30
21
30
1.0
40
0.550
0.875
1.0
10
110
80
-55 to +150
-55 to +150
SM5819
40
28
40
0.600
0.900
UNIT
V
V
V
A
A
V
V
mA
pF
/W
~ 153 ~

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