Q68000-A8549 データシートの表示（PDF） - Siemens AG

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Q68000-A8549

PNP Silicon Switching Transistor

Siemens AG 

SMBT 4126

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA

Collector-base breakdown voltage

IC = 10 µA

Emitter-base breakdown voltage

IE = 10 µA

Collector-base cutoff current

VCB = 20 V, IE = 0

Emitter-base cutoff current

VEB = 3 V, IC = 0

DC current gain

IC = 2 mA, VCE = 1 V

IC = 50 mA, VCE = 1 V

Collector-emitter saturation voltage1)

IC = 50 mA, IB = 5 mA

Base-emitter saturation voltage1)

IC = 50 mA, IB = 5 mA

AC characteristics

Transition frequency

IC = 10 mA, VCE = 20 V, f = 100 MHz

Output capacitance

VCB = 5 V, f = 1 MHz

Input capacitance

VEB = 0.5 V, f = 1 MHz

Small-signal current gain

IC = 1 mA, VCE = 5 V, f = 1 kHz

Noise figure

IC = 0.1 mA, VCE = 5 V, f = 10 Hz to 15 kHz

RS = 1 kΩ

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 25

–

V(BR)CB0 25

–

V(BR)EB0 4

–

ICB0

–

–

IEB0

–

–

hFE

VCEsat

120 –

60

–

–

–

VBEsat

–

–

–

V

–

–

50 nA

50

–

360

–

0.4 V

0.95

fT

250 –

Cobo

–

–

Cibo

–

–

hfe

120 –

NF

–

–

–

MHz

4.5 pF

10

480 –

4

dB

1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

2

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