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SMDA05C-8 データシートの表示(PDF) - General Semiconductor

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SMDA05C-8 Datasheet PDF : 2 Pages
1 2
PART
NUMBER
DEVICE
MARKING
CODE
BIDIRECTIONAL
SMDA05C-8
SMDA12C-8
SMDA15C-8
SMDA24C-8
SEB
SED
SEF
SEH
ELECTRICAL CHARACTERISTICS at 25°C
STAND-OFF
VOLTAGE
MINIMUM
BREAKDOWN
VOLTAGE at IT=1.0mA
(NOTE 1)
MAXIMUM
CLAMPING
VOLTAGE
at IPP = 1A
MAXIMUM
CLAMPING
VOLTAGE
at IPP = 5A
VWM
Volts
V(BR)
Volts
VC (NOTE 2)
Volts
VC (NOTE 2)
Volts
5.0
6.0*
9.8
11.0
12.0
13.4
19.0
24.0
15.0
16.7
24.0
30.0
24.0
26.7
43.0
55.0
MAXIMUM
REVERSE
LEAKAGE
CURRENT at VWM
ID
µA
100.0
1.0
1.0
1.0
MAXIMUM
JUNCTION
CAPACITANCE
(NOTE 3)
CJ
pF
350
150
120
100
NOTES:
(1) V(BR) measured at pulse width of 300µs sq. wave or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) Junction capacitance measured at 1.0 MHZ and applied VR=0 volts
* V(BR) test current (IT) is 10 mA
*Application note: Due to the topology of the SMDA array the VRWM and V(BR) specifications also
apply to the differential voltage between any two data line pins. Hence the SMDA12C-8 is
designed to “see” a maximum voltage excursion of ± 6 volts between any two data lines.
CIRCUIT DIAGRAM* - top view
GND
GND
14
N/C
8
.245 (6.22)
min
SOLDER PAD GEOMETRY
0.045 ± 0.005
(1.14 ± .127)
0.160 ± 0.005
(4.06 ± .127)
1
N/C
GND
7
GND
*SMDA05C-8 is common anode configuration
0.030 ± 0.005
(.762 ± .127)
0.050 typ.
(.127)
Dimensions in inches and (millimeters)
RATING AND CHARACTERISTIC CURVES FOR SMDA05C-8 THRU SMDA24C-8
FIG. 1 - PEAK PULSE POWER RATING CURVE
10
WAVEFORM - SEE FIG. 3
NON-REPETITIVE
1
0.1
FIG. 2 - PULSE DERATING CURVE
100
75
50
25
0.01
100ns
1µs
10µs
100µs
1ms
td, PULSE DURATION, sec.
10ms
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE, °C
150
100
50
0
0
FIG. 3 - PULSE WAVEFORM
tr=8.0 µ sec
PEAK VALUE IPP
HALF VALUE - IPP
2
PULSE DURATION
(td) IS DEFINED as
the POINT WHERE
the PEAK CURRENT
DECAYS to 50%
of IPP
8/20µs WAVEFORM AS
DEFINED BY ANSI/EEE C62.35
td
10 20 30 40 50 60 70 80
t, TIME, µs

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