SPD13N05L データシートの表示（PDF） - Siemens AG
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SPD13N05L Datasheet PDF : 8 Pages
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SPD13N05L
SPU13N05L
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
Pin 1
G
Pin 2
D
Pin 3
S
Type
SPD13N05L
SPU13N05L
VDS
55 V
55 V
ID
12.5 A
12.5 A
RDS(on)
0.12 Ω
0.12 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 12.5 A, VDD = 25 V, RGS = 25 Ω
L = 666 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 12.5 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Package
P-TO252
P-TO251
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Ordering Code
Q67040 - S4124 - A2
Q67040 - S4116 - A2
Values
12.5
8.8
50
52
12.5
3.5
6
± 14
35
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
29/Jan/1998
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