SPU21N05L データシートの表示（PDF） - Siemens AG

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SPU21N05L

SIPMOS ® Power Transistor

Siemens AG 

SPD21N05L

SPU21N05L

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Logic Level

• Avalanche-rated

• dv/dt rated

• 175°C operating temperature

Pin 1

G

Pin 2

D

Pin 3

S

Type

SPD21N05L

SPU21N05L

VDS

55 V

55 V

ID

20 A

20 A

RDS(on)

0.07 Ω

0.07 Ω

Maximum Ratings

Parameter

Continuous drain current

TC = 25 °C

TC = 100 °C

Pulsed drain current

TC = 25 °C

Avalanche energy, single pulse

ID = 20 A, VDD = 25 V, RGS = 25 Ω

L = 450 µH, Tj = 25 °C

Avalanche current,limited by Tjmax

Avalanche energy,periodic limited by Tjmax

Reverse diode dv/dt

IS = 20 A, VDS = 40 V, diF/dt = 200 A/µs

Tjmax = 175 °C

Gate source voltage

Power dissipation

TC = 25 °C

Package

P-TO252

P-TO251

Symbol

ID

IDpuls

EAS

IAR

EAR

dv/dt

VGS

Ptot

Ordering Code

Q67040 - S4137- A2

Q67040 - S4131 - A2

Values

20

14

80

90

20

5.5

6

± 14

55

Unit

A

mJ

A

mJ

kV/µs

V

W

Semiconductor Group

1

29/Jan/1998

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