SPU21N05L データシートの表示（PDF） - Siemens AG

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SPU21N05L

SIPMOS ® Power Transistor

Siemens AG 

SPD21N05L

SPU21N05L

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter: ID = 14 A, VGS = 4.5 V

Gate threshold voltage

VGS(th)= f (Tj)

parameter:VGS=VDS,ID = 40µA

0.24

3.0

Ω

V

0.20

RDS (on)

0.18

2.6

VGS(th) 2.4

2.2

0.16

2.0

0.14

0.12

0.10

98%

typ

0.08

0.06

0.04

0.02

0.00

-60

-20

20

60 100 °C 180

Tj

1.8

1.6

1.4

1.2

1.0

max

0.8

0.6

typ

0.4

0.2

0.0

min

-60 -20 20 60 100 140 V 200

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS = 0V, f = 1MHz

10 4

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

10 2

pF

C

10 3

A

I

F

10 1

Ciss

Coss

10 2

Crss

10 1

0

5 10 15 20 25 30 V 40

VDS

Semiconductor Group

7

10 0

Tj = 25 °C typ

Tj = 175 °C typ

Tj = 25 °C (98%)

Tj = 175 °C (98%)

10 -1

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

VSD

29/Jan/1998

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