SRD00111Z データシートの表示（PDF） - Siemens AG
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SRD00111Z Datasheet PDF : 5 Pages
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SRD 00111Z
Characteristics
All data refer to an ambient temperature of 25 °C.
Parameter
Symbol
Photosensitive area
A
Wavelength of max. sensitivity
Quantumn efficiency at λ = 850 nm
λSmax
η
Spectral sensitivity
λ = 850 nm
λ = 950 nm
Rise and fall time
RL = 50 Ω, VR = 50 V, λ = 850 nm
Junction capacitance at f = 1 MHz
VR = 0 V
VR = 1 V
VR = 12 V
VR = 20 V
3 dB bandwidth
RL = 50 Ω, VR = 50 V, λ = 850 nm
Dark current
VR = 20 V, E = 0
Noise equivalent power
VR = 20 V, λ = 850 nm
Detectivity
VR = 20 V, λ = 850 nm
Temperature coefficient Ip
Isolation current, VIS = 100 V
Sλ850
Sλ950
tr; tf
C0
C1
C12
C20
fc
ID
NEP
D*
TC
IIS
Values
1
850
0.8
Unit
mm2
nm
0.55 (≥ 0.45) A/W
0.45
A/W
1
ns
13
pF
7
pF
3.3
pF
3
pF
500
1 (≤ 5)
MHz
nA
3.3 × 10−14 W/√Hz
3.1 × 1012 cm√Hz/W
0.2
%/K
0.1 (≤ 1) nA
Semiconductor Group
2
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