SS8050 データシートの表示（PDF） - Shenzhen Jin Yu Semiconductor Co., Ltd.

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SS8050

TRANSISTOR(NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

SS8 050

TRANSISTOR(NPN)

SOT-23

FEATURES

Complimentary to SS8550

1. BASE

2. EMITTER

3. COLLECTOR

MARKING: Y1

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

40

25

5

1.5

0.3

150

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Units

V

V

V

A

W

℃

℃

Parameter

Symbol

Test conditions

MIN

TYP

MAX UNIT

Collector-base breakdown voltage

V(BR)CBO IC= 100μA, IE=0

40

Collector-emitter breakdown voltage

V(BR)CEO IC= 0.1mA, IB=0

25

Emitter-base breakdown voltage

V(BR)EBO IE=100μA, IC=0

5

Collector cut-off current

ICBO

VCB=40V, IE=0

Collector cut-off current

ICEO

VCB=20V, IE=0

Emitter cut-off current

IEBO

VEB= 5V, IC=0

DC current gain

hFE(1)

VCE=1V, IC= 100mA

120

hFE(2)

VCE=1V, IC= 800mA

40

Collector-emitter saturation voltage

VCE(sat) IC=800mA, IB= 80mA

Base-emitter saturation voltage

Transition frequency

VBE(sat) IC=800mA, IB= 80mA

VCE=10V, IC= 50mA

fT

100

f=30MHz

CLASSIFICATION OF hFE(1)

Rank

Range

L

120-200

H

200-350

V

V

V

0.1

μA

0.1

μA

0.1

μA

400

0.5

V

1.2

V

MHz

J

300-400

１　

JinYu

semiconductor

www.htsemi.com

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