STR-A6100 データシートの表示（PDF） - Sanken Electric co.,ltd.
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STR-A6100 Datasheet PDF : 26 Pages
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STR-A6100 Series
Parameter
MOSFET
Drain-to-Source
Breakdown Voltage
Symbol
Test
Conditions
Pins
Min.
Typ.
Max. Units
Notes
500
−
VDSS ID = 300 μA 8 – 1 650
−
800
−
−
A6131/31M
A6132
A6151/51M
−
V A6159/59M
A6153E
−
A6169
Drain Leakage Current
IDSS
VD = VDSS 8 – 1
−
−
−
300 μA
−
1.9
A6153E
On Resistance
−
RDS(ON) ID = 0.4 A 8 – 1
−
−
−
2.62
A6132
−
3.95
Ω
A6131/31M
A6151/51M
−
6
A6159/59M
−
−
19.2
A6169
Switching Time
tf
VD = 10V 8 – 1
−
−
250 ns
Thermal Characteristics
Thermal Resistance
(3)
θch-F
−
−
−
52 °C/W
(3) θch-F is thermal resistance between channel and frame. Frame temperature (TF) is measured at the base of pin 3.
3. Performance Curves
3.1 Derating Curves
100
100
80
80
60
60
40
40
20
20
0
0 25 50 75 100 125 150
Channel Temperature, Tch (°C)
0
25 50 75 100 125 150
Channel Temperature, Tch (°C)
Figure 3-1 SOA Temperature Derating Coefficient Curve Figure 3-2 Avalanche Energy Derating Coefficient Curve
STR-A6100 - DS Rev.2.1
SANKEN ELECTRIC CO.,LTD.
5
Jun. 05, 2014
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