T2800DG データシートの表示（PDF） - ON Semiconductor
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T2800DG Datasheet PDF : 4 Pages
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T2800D
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Thermal Resistance, Junction−to−Case
RqJC
2.2
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Sec
TL
260
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min Typ Max
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TC = 25°C
TC = 100°C
IDRM,
IRRM
−
−
10
−
−
2.0
Peak On-State Voltage (Note 2)
(IT = "30 A Peak)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
VTM
−
1.7 2.0
IGT
−
10
25
−
20
60
−
15
25
−
30
60
Gate Trigger Voltage (Continuous dc) (All Quadrants)
(VD = 12 Vdc, RL = 100 W)
Gate Non−Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 W, TC = 100°C)
Holding Current
(VD = 12 Vdc, Initiating Current = "200 mA, Gate Open)
Gate Controlled Turn-On Time
(VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 ms)
DYNAMIC CHARACTERISTICS
VGT
− 1.25 2.5
VGD
0.2
−
−
IH
−
15
30
tgt
−
1.6
−
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms,
Gate Unenergized, TC = 80°C)
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100°C)
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
dv/dt(c)
−
10
−
dv/dt
60
−
−
Unit
°C/W
°C
Unit
mA
mA
V
mA
V
V
mA
ms
V/ms
V/ms
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
IRRM at VRRM
on state
IH
Quadrant 3
MainTerminal 2 −
VTM
VTM
IH
off state
Quadrant 1
MainTerminal 2 +
+ Voltage
IDRM at VDRM
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