T435-400T データシートの表示（PDF） - STMicroelectronics

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T435-400T

4A TRIACS

STMicroelectronics 

T410 / T435

Fig.5 : Relative variation of thermal impedance versus

pulse duration (SOT82 / SOT194 / TO220AB only).

Fig.6 : Relative variation of thermal impedance versus

pulse duration ( ISOWAT T220AB only).

Zth/Rth

1

Zt h( j-c)

0.1

Zt h(j-a)

Zth/Rth

1

Zth (j-c)

0.1

0.01

Zt h( j-a)

0.01

1E-3

1E-2

1E-1

1E +0

tp( s)

1E+1 1E+2 5E+2

1E-3

1E-2

1E-1 1E +0

1E +1

tp (s)

1E+2 5E+2

Fig.7 : Relative variation of gate trigger current and

holding current versus junction temperature.

Fig.8 : Non Repetitive surge peak on-state current

versus number of cycles.

Igt[Tj]

Igt[Tj=25 o C]

2.6

Ih[Tj]

Ih[Tj=25 o C]

2.4

2.2

2.0

1.8

Igt

1.6

1.4

1.2 Ih

1.0

0.8

0.6

Tj(oC)

0.4

-40 -20 0 20 40 60 80 100 120 140

Fig.9 : Non repetitive surge peak on-state current for a

sinusoidal pulse with width : t ≤ 10ms, and

corresponding value of I2t.

Fig.10 : On-state characteristics (maximum values).

4/7

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