A3123ELT データシートの表示（PDF） - Allegro MicroSystems
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A3123ELT Datasheet PDF : 8 Pages
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3121, 3122, AND 3123
HALL-EFFECT SWITCHES
FOR HIGH-TEMPERATURE
OPERATION
SENSOR LOCATIONS
(±0.005" [0.13 mm] die placement)
Suffix “LT”
ACTIVE AREA DEPTH
0.030"
0.76 mm
NOM
0.089"
2.26 mm
A
0.043"
1.09 mm
1
2
3
Dwg. MH-008-2C
Suffix “U”
ACTIVE AREA DEPTH
0.016"
0.41 mm
NOM
0.091"
2.31 mm
0.070"
1.78 mm
A
BRANDED
SURFACE 1
2
3
Dwg. MH-002-2B
Suffix “UA”
ACTIVE AREA DEPTH
0.019"
0.48 mm
NOM
0.082"
2.07 mm
OPERATION
The output of these devices (pin 3) switches low when the mag-
netic field at the Hall sensor exceeds the operate point threshold (B ).
OP
At this point, the output voltage is V
. When the magnetic field
OUT(SAT)
is reduced to below the release point threshold (BRP), the device output
goes high. The difference in the magnetic operate and release points is
called the hysteresis (B ) of the device. This built-in hysteresis allows
hys
clean switching of the output even in the presence of external mechani-
cal vibration and electrical noise.
APPLICATIONS INFORMATION
Hall effect applications information is available in the “Hall-Effect
IC Applications Guide”, which can be found in the latest issue of
Allegro MicroSystems Data Book AMS-702.
20
15
10
5.0
0
-5.0
0
CHANGE IN OPERATE POINT
TA = +25°C
5
10
15
SUPPLY VOLTAGE IN VOLTS
20
25
Dwg. GH-042
A
BRANDED
SURFACE 1
2
0.055"
1.38 mm
3
Dwg. MH-011-2C
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
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