SD1732 データシートの表示（PDF） - STMicroelectronics
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SD1732 Datasheet PDF : 11 Pages
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SD1732 (TDS595)
Table 2. Absolute Maximum Ratings (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Device Current
PDISS
Power Dissipation
TJ
Junction Temperature
TSTG
Storage Temperature
Table 3. Thermal Data
Symbol
Parameter
RTH(j-c)
Junction-Case Thermal Resistance
Value
45
25
4.0
2 x 2.6
65
+200
– 65 to +150
Value
2.5
Unit
V
V
V
A
W
°C
°C
Unit
°C/W
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
Table 4. Static
Symbol
Test Conditions
BVCBO
BVCEO
BVEBO
hFE
IC = 20 mA; IE = 0 mA
IC = 40 mA; IB = 0 mA
IE = 5 mA; IC = 0 mA
VCE = 20 V; IC = 0.5 A
Min.
45
25
3.0
10
Value
Typ.
—
—
—
—
Max.
—
—
—
—
Unit
V
V
V
—
Table 5. Dynamic
Symbol
Test Conditions
Min.
Value
Typ.
Max.
Unit
POUT
f = 845 MHz; VCE = 25 V; ICQ = 2 x 850 mA
14
—
—
W
GP
POUT = 14 W; VCE = 25 V; ICQ = 2 x 850 mA
8.5
—
—
dB
IMD3(1)
POUT = 14 W; VCE = 25 V; ICQ = 2 x 850 mA
—
–47
—
dBc
CMD(2)
POUT = 14 W; VCE = 25 V; ICQ = 2 x 850 mA
—
20
—
%
COB
f = 1 MHz; VCB = 25 V
—
—
20
pF
Note: 1. IMD 3 Tone Testing
Vision Carrier –8 dB ref
Sound Carrier ––7 dB ref
Sideband Carrier –16 dB ref
2. CMD: Cross Modulation Distortion of the Voltage Variation (%) of Sound Carrier When Vision Carrier is Switched from 0 to –20 dB
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