HMC314 データシートの表示（PDF） - Hittite Microwave

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HMC314

GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz

Hittite Microwave 

v02.0802

HMC314

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 0.7 - 4.0 GHz

8

Absolute Maximum Ratings

Truth Table

Collector Bias Voltage (Vcc)

+5.0 Vdc

Control Voltage Range (Vpd)

-0.2 to 3.5 Vdc

RF Input Power (RFin)(Vs = +5.0 Vdc) +20 dBm

Junction Temperature

150 °C

Continuous Pdiss (T = 65 °C)

(derate 6.57 mW/°C above 65 °C)

0.558 W

Thermal Resistance

(junction to lead)

152 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +65 °C

Vs

Vctl

Is

Ictl

State

5V

5V

150 mA

12 mA

On

5V

0V

<1 µA

<1 µA Power Down

%,%#42/34!4)#3%.3)4)6%$%6)#%

/"3%26%(!.$,).'02%#!54)/.3

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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