TIP41 データシートの表示（PDF） - Comset Semiconductors
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TIP41 Datasheet PDF : 4 Pages
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SEMICONDUCTORS
NPN TIP41-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
TIP41
ICES
Collector Cutoff Current IE= 0, VCE = VCEO
TIP41A
TIP41B
-
- 0.4 Ma
TIP41C
ICEO
Collector Cutoff Current
IB= 0, VCE = 30V
IB= 0, VCE = 60V
TIP41
TIP41A
-
TIP41B
TIP41C
-
- 0.7
mA
- 0.7
TIP41
IEBO
Emitter Cutoff Current
VEB= 5 V, IC= 0
TIP41A
TIP41B
-
-
1 mA
TIP41C
TIP41 40 -
-
VCEO
Collector-Emitter
Breakdown Voltage (*)
IC= 30 mA, IB= 0
TIP41A 60
TIP41B 80
-
-
-
-
V
TIP41C 100 -
-
TIP41
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= 6 A, IB= 600
mA
TIP41A
TIP41B
-
- 1.5 V
TIP41C
TIP41
VBE(on)
Base-Emitter Voltage (*) IC= 6 A, VCE= 4 V
TIP41A
TIP41B
-
-
2
V
TIP41C
TIP41
VCE= 4 V, IC= 0.3 A
TIP41A
TIP41B
30
-
-
hFE
DC Current Gain (*)
TIP41C
TIP41
-
VCE= 4 V, IC= 3 A
TIP41A
TIP41B
15
-
75
TIP41C
TIP41
hfe
Small Signal Current
Gain
VCE= 10 V, IC= 0.5
A, f= 1kHz
TIP41A
TIP41B
20
-
-
-
TIP41C
TIP41
fT
Current Gain-Bandwidth VCE= 10 V, IC= 0.5 TIP41A
Product
A
TIP41B
3
-
- MHz
TIP41C
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
04/10/2012
COMSET SEMICONDUCTORS
3|4
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