UPG175TA-E3 データシートの表示（PDF） - NEC => Renesas Technology

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UPG175TA-E3

L-Band PA DRIVER AMPLIFIER

NEC => Renesas Technology 

PRELIMINARY DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG175TA

L-Band PA DRIVER AMPLIFIER

DESCRIPTION

µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC

(Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the

high gain and low distortion.

FEATURES

• Low Operation Voltage: VDD1 = VDD2 = 3.0 V

• fRF: 925 to 960 MHz@ Pout = +9 dBm

• Low distortion: Padj1 = –60 dBc typ. @ VDD = 3.0 V, Pout = +9 dBm, VAGC = 2.5 V

External input and output matching

• Low operation Current: IDD = 20 mA typ. @ VDD = 3.0 V, Pout = +9 dBm, VAGC = 2.5 V

External input and output matching

• Variable gain control function: ∆G = 35 dB typ. @ VAGC = 0.5 to 2.5 V

• 6 pin mini-mold package

APPLICATION

• Digital Cellular: PDC800M, etc.

ORDERING INFORMATION (PLAN)

PART NUMBER

µPG175TA-E3

PACKAGE

6 pin Mini-mold

PACKING FORM

Carrier tape width is 8 mm, Quantity is 3 kpcs per reel.

Remark For sample order, please contact your local NEC sales office. (Part number for sample order: µPG175TA)

Caution The IC must be handled with care to prevent static discharge because its circuit composed of

GaAs HJ-FET.

The information in this document is subject to change without notice.

Document No. P13470EJ1V0DS00 (1st edition)

Date Published May 1998 N CP(K)

©

Printed in Japan

1998

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