VN1206L データシートの表示（PDF） - Vishay Semiconductors
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VN1206L Datasheet PDF : 4 Pages
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VN1206L
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-Resistanceb
rDS(on)
Forward Transconductanceb
gfs
Common Source Output Conductanceb
gos
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Switchingc
Turn-On Time
Turn-Off Time
tON
td(on)
tr
tOFF
td(off)
tf
Notes
a. For DESIGN AID ONLY, not subject to production testing..
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
Test Conditions
VGS = 0 V, ID = 100 mA
VDS = VGS, ID = 250 mA
VDS = VGS, ID = 1 mA
VDS = 0 V, VGS = "15 V
TJ = 125_C
VDS = 0 V, VGS = "20 V
VDS = 96 V, VGS = 0 V
TJ = 125_C
VDS = 120 V, VGS = 0 V
TJ = 125_C
VDS = 10 V, VGS = 4.5 V
VDS = 10 V, VGS = 10 V
VGS = 2.5 V, ID = 0.1 A
VGS = 3.5 V, ID = 0.1 A
VGS = 10 V, ID = 0.3 A
VGS = 4.5 V, ID = 0.2 A
TJ = 125_C
VGS = 10 V, ID = 0.5 A
TJ = 125_C
VDS = 10 V, ID = 0.2 A
VDS = 10 V, ID = 0.5 A
VDS = 7.5 V, ID = 0.1 A
VDS = 25 V, VGS = 0 V
f = 1 MHz
VDD = 60 V, RL = 150 W
ID ^ 0.4 A, VGEN = 10 V
RG = 25 W
Limits
Min
Typa
Max Unit
120
145
1.4
V
0.8
1.5
2
"100
"500
nA
mA
10
500
0.6
A
1
1.6
6
10
4.5
3.3
3.8
W
7.6
3.3
6
7
14.8
400
300
425
mS
0.4
35
125
15
50
pF
2
20
6
3
8
3
8
ns
10
7
18
2.5
12
VNDQ12
www.vishay.com
11-2
Document Number: 70227
S-04279—Rev. E, 16-Jul-01
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