VN1206L データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
メーカー
VN1206L Datasheet PDF : 4 Pages
| |||
VN1206L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
1000
800
600
Ohmic Region Characteristics
VGS = 10 V
6V
4V
400
3V
200
0
0
2V
1
2
3
4
5
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
500
VDS = 10 V
25_C
125_C
400
TJ = –55_C
300
200
100
Output Characteristics for Low Gate Drive
200
VGS = 3.0 V
2.6 V
160
2.8 V
2.4 V
120
2.2 V
80
40
0
0
2.0 V
1.8 V
1.6 V
0.4
0.8
1.2
1.6
2.0
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
6.0
5.5
5.0
4.5
0.25 A
4.0
3.5
0.5 A
3.0
I D = 0.1 A
0
0
1
2
3
4
5
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
5.0
VGS = 10 V
4.5
4.0
2.5
0
10
20
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
2.25
VGS = 10 V
ID = 0.5 A
2.00
1.75
0.1 A
1.50
1.25
3.5
1.00
3.0
0.75
2.5
0
0.2
0.4
0.6
0.8
1.0
ID – Drain Current (A)
0.50
–50 –10
30
70
110
150
TJ – Junction Temperature (_C)
Document Number: 70227
S-04279—Rev. E, 16-Jul-01
www.vishay.com
11-3
Share Link: 