VN1206L データシートの表示（PDF） - Vishay Semiconductors
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VN1206L Datasheet PDF : 4 Pages
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VN1206L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10
VDS = 15 V
Capacitance
120
VGS = 0 V
f = 1 MHz
100
1
TJ = 150_C
80
25_C
0.1
60
40
Ciss
0.01
0
–55_C
0.5
1
1.5
2
VGS – Gate-to-Source Voltage (V)
20
Coss
Crss
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Gate Charge
12
I D = 0.5 A
10
Load Condition Effects on Switching
100
VDD = 25 V
RG = 25 W
VGS = 0 to 10 V
8
6
VDS = 60 V
4
96 V
2
tf
td(off)
10
td(on)
0
0
120
240
360
480
600
Qg – Total Gate Charge (pC)
tr
1
10
100
1000
ID – Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.1
0.01
Single Pulse
1
www.vishay.com
11-4
10
100
t1 – Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)
1K
10 K
Document Number: 70227
S-04279—Rev. E, 16-Jul-01
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