VN2410LG データシートの表示（PDF） - ON Semiconductor
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VN2410LG Datasheet PDF : 3 Pages
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VN2410L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
STATIC CHARACTERISTICS
Drain −Source Breakdown Voltage
(VGS = 0, ID = 100 μA)
Zero Gate Voltage Drain Current
(VDS = 120 Vdc, VGS = 0)
(VDS = 120 Vdc, VGS = 0, TA = 125°C)
Gate− Body Leakage
(VDS = 0, VGS = ±15 V)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
On−State Drain Current (Note 1)
(VGS = 10 V, VDS ≥ 2.0 VDS(on))
Drain−Source On Resistance (Note 1)
(VGS = 2.5 V, ID = 0.1 A)
(VGS = 10 V, ID = 0.5 A)
Forward Transconductance (Note 1)
(VDS = 10 V, ID = 0.5 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
Turn−Off Time
(VDD = 60 Vdc, ID = 0.4 A,
RL = 150 Ω, RG = 25 Ω)
1. Pulse Test; Pulse Width < 300 μs, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
VN2410L
VN2410LG
VN2410LZL1
VN2410LZL1G
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Symbol
Min
V(BR)DSS
240
IDSS
−
−
IGSS
−
VGS(th)
0.8
ID(on)
1.0
rDS(on)
−
−
gfs
300
Max
−
10
500
±100
2.0
−
10
10
−
Unit
Vdc
μAdc
nAdc
Vdc
Adc
Ω
mS
Ciss
Coss
Crss
t(on)
t(r)
t(off)
t(f)
−
125
pF
−
50
pF
−
20
pF
−
8.0
ns
−
8.0
ns
−
23
ns
−
34
ns
Shipping
1000 Units / Box
1000 Units / Box
2000 Ammo Pack
2000 Ammo Pack
http://onsemi.com
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