WFF2N65B データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFF2N65B Datasheet PDF : 7 Pages
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Features
� 2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 9.0nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Isolation Voltage(VISO=4000V AC)
� Maximum Junction Temperature Range(150℃)
WFF2N65B
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply .
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL
Maximum lead Temperature for soldering purposes
*Drain current limited by maximum junction temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
650
2*
1.3*
16*
±30
240
10
4.5
20
0.26
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
-
-
6.25
0.5
-
-
-
-
62.5
Rev.A Apr.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Units
℃/W
℃/W
℃/W
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