WFU4N60(2010) データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFU4N60 Datasheet PDF : 7 Pages
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WFU4N60
Silicon N-Channel MOSFET
Features
■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 16nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Isolation Voltage ( VISO = 4000V AC )
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has
been Especially designed to minimize on-state resistance,
have a high Rugged avalanche characteristics. This devices
is specially well Suited for half bridge and full bridge resonant
topology line a Electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
Junction and Storage Temperature
TL
Channel Temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
600
4
2.5
16
±30
240
10
4.5
80
0.78
-55~150
300
Thermal Characteristics
Symbol
Parameter
Min
RQJC
Thermal Resistance, Junction-to-Case
-
RQJA
Thermal Resistance, Junction-to-Ambient*
RQJA
Thermal Resistance, Junction-to-Ambient
-
*When mounted on the minimum pad size recommended(PCB Mount)
Value
Typ
-
-
Max
1.56
50
110
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
℃/W
℃/W
Rev.A Nov.2010
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