WTPB12A60BW-HF データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd

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WTPB12A60BW-HF

Sensitive Gate Bi-Directional Triode Thyristor

Shenzhen Winsemi Microelectronics Co., Ltd 

WTPB12A60BW

Electrical Characteristics (TJ = 25°C unless otherwise specified)

Symbol

Characteristics

Peak Forward or Reverse Blocking Current

IDRM//IRRM (VDRM=VRRM,)

TJ=25℃

Min Typ. Max Unit

-

-

5 μA

T J=125℃

-

-

1 mA

VTM Forward “On” Voltage (Note2) (ITM = 17A tp=380μs)

-

- 1.55 V

Gate Trigger Current (Continuous dc)

IGT

(VD = 12 Vdc, RL = 33 Ω)

VGT

Gate Trigger Voltage (Continuous dc)

(VD =12 Vdc, RL = 33 Ω)

T2+G+

-

-

50

T2+G-

-

-

50 mA

T2-G-

-

-

50

T2+G+

-

-

1.2

T2+G-

-

-

1.2 V

T2-G-

-

-

1.2

VGD Gate threshold voltage( VD= VDRM,RL = 3.3 KΩ,TJ=125℃,)

0.2

-

-

V

dV/dt Critical rate of rise of commutation Voltage (VD=0.67VDRM)

40

-

- V/μs

IH

Holding Current (IT= 500 mA)

(Note 3)

-

-

25 mA

Latching current

IL

(VD =12 Vdc,IGT=0.1A)

Rd

Dynamic resistance

T2+G+

-

-

40

T2+G-

-

-

70 mA

T2-G-

-

-

40

-

-

35 mΩ

Note 2. Forward current applied for 1 ms maximum duration, duty cycle

Note 3. For both polarities of A2 to A1

2/6

Steady, keep you advance

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