MTB75N06HD データシートの表示（PDF） - Motorola => Freescale
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MTB75N06HD Datasheet PDF : 12 Pages
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TYPICAL ELECTRICAL CHARACTERISTICS
MTB75N06HD
150
TJ = 25°C
125
100
VGS = 10 V
8V
9V
7V
150
VDS ≥ 10 V
125
100
75
6V
50
25
5V
0
0
0.5
1
1.5
2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
75
50
100°C
25°C
25
TJ = – 55°C
0
2
3
4
5
6
7
8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.016
0.014
TJ = 25°C
VGS = 10 V
0.012
TJ = 100°C
0.010
25°C
0.008
0.006
– 55°C
0.004
0
25
50
75
100
125
150
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.012
0.011
TJ = 25°C
0.010
0.009
VGS = 10 V
0.008
15 V
0.007
0.006
0
25
50
75
100
125
150
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.9
VGS = 10 V
ID = 37.5 A
1.6
1.3
1
0.7
– 50 – 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
1000
VGS = 0 V
100
TJ = 125°C
100°C
10
25°C
1
0
10
20
30
40
50
60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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