ZUMT717(1998) データシートの表示（PDF） - Diodes Incorporated.

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ZUMT717
(Rev.:1998)

Super323™ SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR

Diodes Incorporated. 

ZUMT717

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

V(BR)CBO

-12

Breakdown Voltage

V

IC= -100µA

Collector-Emitter

V(BR)CEO

-12

Breakdown Voltage

V

IC= -10mA*

Emitter-Base

V(BR)EBO

-5

Breakdown Voltage

V

IE= -100µA

Collector Cut-Off

ICBO

Current

-10 nA VCB=-10V

Emitter Cut-Off

IEBO

Current

-10 nA VEB=-4V

Collector Emitter

ICES

Cut-Off Current

-10 nA VCES=-10V

Collector-Emitter

VCE(sat)

Saturation Voltage

Base-Emitter

VBE(sat)

Saturation Voltage

-25 -40 mV

-55 -100 mV

-110 -175 mV

-160 -215 mV

-185 -240 mV

-990 -1100 mV

IC= -0.1A, IB= -10mA*

IC= -0.25A, IB=-10 mA*

IC= -0.5A, IB=-10 mA*

IC= -1A, IB= -50mA*

IC= -1.25A, IB= -100mA*

IC= -1.25A, IB= -100mA*

Base-Emitter

Turn-On Voltage

VBE(on)

-850 -1000 mV IC= -1.25A, VCE= 2V*

Static Forward

hFE

Current Transfer

Ratio

Transition

fT

Frequency

300 490

300 450

200 340

125 250

75 140

30 80

220

MHz

IC= -10mA, VCE=-2V*

IC= -0.1A, VCE= -2V*

IC= -0.5A, VCE= -2V*

IC= -1.25A, VCE=-2V*

IC= -2A, VCE= -2V*

IC= -3A, VCE= -2V*

IC= -50mA, VCE=-10 V

f= 100MHz

Output Capacitance Cobo

15

pF VCB= -10V, f=1MHz

Turn-On Time

t(on)

Turn-Off Time

t(off)

50

ns

VCC= -10V, IC=-1A

IB1=IB2=-100mA

135

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

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