ZVP0535A データシートの表示（PDF） - Zetex => Diodes

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ZVP0535A

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Zetex => Diodes 

P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 350 Volt VDS

* RDS(on)=100Ω

ZVP0535A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at Tamb=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at Tamb=25°C

Operating and Storage Temperature Range

SYMBOL

VDS

ID

IDM

VGS

Ptot

Tj:Tstg

D

G

S

E-Line

TO92 Compatible

VALUE

-350

-50

-480

± 20

700

-55 to +150

UNIT

V

mA

mA

V

mW

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source

Breakdown Voltage

BVDSS -350

V

ID=-1mA, VGS=0V

Gate-Source

Threshold Voltage

VGS(th) -1.5 -4.5 V

ID=-1mA, VDS= VGS

Gate-Body Leakage

IGSS

100 nA VGS=± 20V, VDS=0V

Zero Gate Voltage

Drain Current

IDSS

-20 µA VDS=-350 V, VGS=0

-2 mA VDS=-280 V, VGS=0V,

T=125°C(2)

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

ID(on)

RDS(on)

-120

mA VDS=-25 V, VGS=-10V

100 Ω

VGS=-10V,ID=-50mA

Forward Transconductance gfs

40

(1)(2)

mS VDS=-25V,ID=-50mA

Input Capacitance (2)

Ciss

Common Source Output

Coss

Capacitance (2)

120 pF

20 pF

VDS=-25 V, VGS=0V, f=1MHz

Reverse Transfer Capacitance Crss

(2)

5 pF

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

td(on)

tr

td(off)

tf

10 ns

15 ns VDD≈-25V, ID=-50mA

15 ns

20 ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%

3-409

(

2

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