ZVP0535A データシートの表示（PDF） - Zetex => Diodes

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ZVP0535A

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Zetex => Diodes 

TYPICAL CHARACTERISTICS

ZVP0535A

60

50

VDS=-10V

40

30

20

10

0

0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10

VGS-Gate Source Voltage (Volts)

Transconductance v gate-source voltage

0

-2

VDS=

ID= -250mA

-4

-100V -200V -350V

-6

-8

-10

-12

-14

-16

0

0.5

1.0 1.5 2.0

2.5 3.0

Q-Charge (nC)

Gate charge v gate-source voltage

1000

100

VGS=-4V

-5V

-6V

-8V

-10V

10

-1

-10

-100

ID-Drain Current (mA)

-1000

On-resistance v Gate-Source Voltage

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

Drain-Source

Resistance

RDS(on)

VGS=-10V

ID=-50mA

VGS=VDS

0.8

Gate

Threshold

Voltage

ID=-1mA

VGS(TH)

0.6

0.4

-40 -20 0 20 40 60 80 100 120 140 160 180

T-Temperature (°C)

Normalised RDS(on) and VGS(th) vs Temperature

3-411

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