IRF5N5210SCV データシートの表示（PDF） - International Rectifier

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IRF5N5210SCV

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier 

IRF5N5210

1000

100

VGS

TOP -15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

BOTTOM -4.5V

10

-4.5V

1

0.1

0.1

20µs PULSE WIDTH

TJ = 25 °C

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

100

VGS

TOP -15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

BOTTOM -4.5V

10

-4.5V

1

0.1

0.1

20µs PULSE WIDTH

TJ = 150 °C

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

TJ = 25° C

100

TJ = 150° C

10

V DS=1-50V

20µs PULSE WIDTH

1

4

6

8

10

12

-VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

www.irf.com

2.5 ID = -31A

2.0

1.5

1.0

0.5

VGS = -10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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