WEDPN16M64VR-100BI データシートの表示（PDF） - White Electronic Designs => Micro Semi
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WEDPN16M64VR-100BI Datasheet PDF : 12 Pages
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WEDPN16M64VR-XBX
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CHARACTERISTICS
(Notes 5, 6, 8, 9, 11)
Parameter
Symbol
-133
Min
Max
-125
-100
-66
Unit
Min Max
Min
Max
Min Max
Access time from CLK (pos. edge)
CL = 3
tAC
CL = 2
tAC
6
7.5
ns
6
9
ns
Address hold time
tAH
1
1
1
1
ns
Address setup time
tAS
2
2
2
2
ns
CLK high-level width
tCH
3
3
3
3
ns
CLK low-level width
tCL
3
3
3
3
ns
Clock cycle time (22)
CL = 3
tCK
CL = 2
tCK
8
10
ns
12
15
ns
CKE hold time
tCKH
1
1
1
1
ns
CKE setup time
tCKS
2
2
2
2
ns
CS, RAS, CAS, WE, DQM hold time
tCMH
1
1
1
1
ns
CS, RAS, CAS, WE, DQM setup time
tCMS
2
2
2
2
ns
Data-in hold time
tDH
1
1
1
1
ns
Data-in setup time
tDS
2
2
2
2
ns
Data-out high-impedance time
CL = 3 (10) tHZ
CL = 2 (10) tHZ
6
8
ns
6
10
ns
Data-out low-impedance time
tLZ
1
1
1
2
ns
Data-out hold time (load)
tOH
3
3
3
3
ns
Data-out hold time (no load) (26)
tOHN
1.8
1.8
1.8
1.8
ns
ACTIVE to PRECHARGE command
tRAS
50 120,000 50 120,000 50 120,000 60 120,000 ns
ACTIVE to ACTIVE command period
tRC
70
70
70
70
ns
ACTIVE to READ or WRITE delay
tRCD
20
20
20
30
ns
Refresh period (8,192 rows) Commercial, Industrial
tREF
64
64
64
64
ms
Refresh period (8,192 rows) Military
tREF
16
16
16
16
ms
AUTO REFRESH period
tRFC
70
70
70
90
ns
PRECHARGE command period
tRP
20
20
20
30
ns
ACTIVE bank A to ACTIVE bank B command
tRRD
20
20
20
20
ns
Transition time (7)
tT
0.3
1.2
0.3
1.2
0.3
1.2
1
1.2
ns
WRITE recovery time
(23)
tWR 1CLK + 7ns
1CLK + 7ns
1 CLK + 7ns
1 CLK + 7ns
(24)
15
15
15
15
ns
Exit SELF REFRESH to ACTIVE command
tXSR
80
80
80
90
ns
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
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