TH562 データシートの表示（PDF） - STMicroelectronics
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TH562 Datasheet PDF : 9 Pages
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SD1731 (TH562)
Table 2. Absolute Maximum Ratings (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Device Current
PDISS
Power Dissipation (Theatsink ≤ 25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
Value
Unit
110
V
55
V
4.0
V
20
A
233
W
+200
°C
– 65 to +150
°C
Table 3. Thermal Data
Symbol
Parameter
Value
Unit
RTH(j-c)
) RTH(c-s)
Junction-Case Thermal Resistance
Case-Heatsink Thermal Resistance
duct(s ELECTRICAL SPECIFICATIONS
Pro Table 4. Static (Tcase = 25°C)
te Symbol
Test Conditions
sole BVCBO
b BVCEO
- O BVEBO
t(s) ICEO
c ICES
u hFE
IC = 200 mA; IE = 0 mA
IC = 200 mA; IB = 0 mA
IE = 20 mA; IC = 0 mA
VCE = 30 V; IE = 0 mA
VCE = 55 V; IE = 0 mA
VCE = 6 V; IC = 10 A
Prod Table 5. Dynamic (Theatsink = 25°C)
te Symbol
Test Conditions
ole POUT
ObsGP(1)
f = 30 MHz; VCE = 50 V; ICQ = 150 mA
POUT = 220 W PEP; VCE = 50 V; ICQ = 150 mA
0.55
°C/W
0.2
°C/W
Min.
110
55
4.0
—
—
15
Value
Typ.
—
—
—
—
—
—
Max.
—
—
—
5
10
80
Unit
V
V
V
mA
mA
—
Min.
220
13
Value
Typ.
—
—
Max.
—
—
Unit
W
dB
IMD(1)
POUT = 220 W PEP; VCE = 50 V; ICQ = 150 mA
—
—
–30
dBc
ηc(1)
POUT = 220 W PEP; VCE = 50 V; ICQ = 150 mA
40
—
—
%
COB
f = 1 MHz; VCB = 50 V
—
330
—
pF
Note: 1. f1 = 30.00 MHz, f2 = 30.001 MHz
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