BLF242 データシートの表示（PDF） - Philips Electronics

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BLF242

HF/VHF power MOS transistor

Philips Electronics 

Philips Semiconductors

HF/VHF power MOS transistor

Product specification

BLF242

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VDS

±VGS

ID

Ptot

Tstg

Tj

drain-source voltage

gate-source voltage

DC drain current

total power dissipation

storage temperature

junction temperature

up to Tmb = 25 °C

MIN.

−

−

−

−

−65

−

MAX. UNIT

65

V

20

V

1

A

16

W

150 °C

200 °C

THERMAL RESISTANCE

SYMBOL

Rth j-mb

Rth mb-h

PARAMETER

thermal resistance from

junction to mounting base

thermal resistance from

mounting base to heatsink

CONDITIONS

Tmb = 25 °C; Ptot = 16 W

Tmb = 25 °C; Ptot = 16 W

THERMAL RESISTANCE

11 K/W

0.3 K/W

10

handbook, halfpage

ID

(A)

1

(1)

10−1

MRA918

(2)

10−2

1

10

VDS (V)

102

(1) Current is this area may be limited by RDS(on).

(2) Tmb = 25 °C.

Fig.2 DC SOAR.

handbook,2h0alfpage

Ptot

(W)

10

MPG141

(2)

(1)

0

0

50

100 Th (°C) 150

(1) Continuous operation.

(2) Short-time operation during mismatch.

Fig.3 Power/temperature derating curves.

September 1992

3

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