BLF242 データシートの表示（PDF） - Philips Electronics
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BLF242 Datasheet PDF : 11 Pages
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Philips Semiconductors
HF/VHF power MOS transistor
Product specification
BLF242
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS
IDSS
IGSS
VGS(th)
gfs
RDS(on)
IDSX
Cis
Cos
Crs
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
VGS = 0; ID = 0.1 mA
VGS = 0; VDS = 28 V
±VGS = 20 V; VDS = 0
ID = 3 mA; VDS = 10 V
ID = 0.3 A; VDS = 10 V
ID = 0.3 A; VGS = 1 V
VGS = 10 V; VGS = 10 V
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
MIN. TYP. MAX. UNIT
65 −
−
V
−
−
10 µA
−
−
1
µA
2
−
4.5 V
0.16 0.24 −
S
−
3.3 5
Ω
−
1.2 −
A
−
13 −
pF
−
9.4 −
pF
−
1.7 −
pF
handbook, h4alfpage
T.C.
(mV/K)
2
0
–2
MBB777
1.5
handbook, halfpage
ID
(A)
1
0.5
MGP142
–4
0
100
VDS = 10 V.
200 ID (mA) 300
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
0
0
5
10
15
VGS (V)
VDS = 10 V; Tj = 25 °C.
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992
4
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