HYB3165405BJ-50 データシートの表示（PDF） - Siemens AG

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HYB3165405BJ-50

16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

Siemens AG 

TRUTH TABLE

HYB3164(5)405BJ/BT(L)-40/-50/-60

16M x 4-DRAM

FUNCTION

RAS CAS

Standby

H

Read

L

Early-Write

L

Delayed-Write

L

Read-Modify-Write

L

Hyper Page Mode Read 1st Cycle L

2nd Cycle L

Hyper Page Mode Write 1st Cycle L

2nd Cycle L

Hyper Page Mode RMW 1st Cycle L

2st Cycle L

RAS only refresh

L

CAS-before-RAS refresh

H-L

Test Mode Entry

H-L

Hidden Refresh

READ L-H-L

WRITE L-H-L

Self Refresh

(L-version only)

H-L

H-X

L

L

L

L

H-L

H-L

H-L

H-L

H-L

H-L

H

L

L

L

L

L

WE

X

H

L

H-L

H-L

H

H

L

L

H-L

H-L

X

H

L

H

L

H

OE

X

L

X

H

L-H

L

L

X

X

L-H

L-H

X

X

X

L

X

X

ROW COL

ADDR ADDR

I/O1-

I/O4

X

X High Impedance

ROW COL

Data Out

ROW COL

Data In

ROW COL

Data In

ROW COL Data Out, Data In

ROW COL

Data Out

n/a COL

Data Out

ROW COL

Data In

n/a COL

Data In

ROW COL Data Out, Data In

n/a COL Data Out, Data In

ROW n/a High Impedance

X

n/a High Impedance

X

n/a High Impedance

ROW COL

Data Out

ROW COL

Data In

X

X High Impedance

Semiconductor Group

4

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