TEA1210TS データシートの表示（PDF） - Philips Electronics

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TEA1210TS

High efficiency, high current DC/DC converter

Philips Electronics 

Philips Semiconductors

High efficiency, high current DC/DC converter

Preliminary specification

TEA1210TS

QUICK REFERENCE DATA

Tamb = −40 to +80 °C; all voltages measured with respect to ground; positive currents flow into the IC; unless otherwise

specified.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

Voltage levels

UPCONVERSION; pin U/D = LOW

VI

VO

VI(start)

VI(uvlo)

input voltage

output voltage

start-up input voltage

undervoltage lockout input voltage

DOWNCONVERSION; pin U/D = HIGH

VI

input voltage

VO

output voltage

GENERAL

Vfb

∆Vwindow

feedback input voltage

output voltage window

Current levels

Iq

Ishdwn

∆Ilim(up)

Ilim(down)

ILX

quiescent current on pins LX

current in shut-down mode

current limit deviation in up mode

current limit in down mode

maximum continuous current on

pins LX

IL < 200 mA

PWM mode

VI =2.40 V; VO = 3.60 V

Ilim(up) set to 2.0 A

Tamb = 60 °C

VI(start) −

2.90 −

5.50 V

5.50 V

1.20 1.60 1.85 V

1.50 2.10 2.70 V

2.90 −

1.30 −

5.50 V

5.50 V

1.20 1.25 1.30 V

1.5 2.0 3.0 %

100 125 150 µA

−

2

10

µA

−12 −

+12 %

4.8

A

−

−

1.8 A

Power MOSFETs

RDSon(N)

drain-to-source on-state resistance

NFET

RDSon(P)

drain-to-source on-state resistance

PFET

Tj = 27 °C

Tj = 27 °C

−

56

63

mΩ

−

68

77

mΩ

Efficiency

η

efficiency upconversion

VI = 2.4 V; VO = 3.6 V;

Tamb = 20 °C

IL = 1 mA

IL = 100 mA

IL = 500 mA

IL = 1.5 A; not continual

Timing

fsw

switching frequency

PWM mode

fsync

synchronization clock input frequency

tres

response time

from standby to Po(max)

83

86

−

%

90

93

−

%

92

94

−

%

84

86

−

%

480 600 720 kHz

9

13

20

MHz

−

25

−

µs

1999 Mar 08

3

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